inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRFB4110 features drain current Ci d = 180a@ t c =25 drain source voltage- : v dss = 100v(min) static drain-source on-resistance : r ds(on) = 4.5m (max) applications high efficiency synchronous rectification in smps uninterruptible power supply high speed power switching hard switched and high frequency circuits absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 100 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 180 a i dm drain current-single pluse 670 a p d total dissipation @t c =25 370 w t j max. operating junction temperature 175 t stg storage temperature -55~175 symbol parameter max unit r th j-c thermal resistance, junction to case 0.402 /w r th j-a thermal resistance, junction to ambient 62 /w
inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRFB4110 electrical characteristics t c =25 unless otherwise specified symbo l parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 100 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 75a 4.5 m i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 100v; v gs = 0 20 a v sd forward on-voltage i s = 75a; v gs =0 1.3 v gfs forward transconductance v ds = 50v i d = 75a 160 s
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